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FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier ADVANCED INFORMATION April 2006 FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Features 25dB small signal gain 30dBm output power @ 1dB compression 16.5% PAE at 22dBm modulated power out 2% EVM at 22dBm modulated power out 3.4V collector supply operation 2.85V reference supply operation Lead-free RoHS compliant 3 x 3 x 1mm leadless General Description The FMPA2300 power amplifier is designed for high performance WiMax and WiBro applications in the 2.3-2.4GHz frequency band. The low profile 8 pin 3 x 3 x 1mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. package Internally matched to 50 and DC blocked RF input/output Optimized for use in 802.16e applications Functional Block Diagram PA MODULE (Top View) Device (3.0 x 3.0 x 1.0mm) VCC1 1 Input Match DC Bias Control Output Match 8 7 6 5 VCC2 RF OUT GND GND X 23 Y T T 00 RF IN 2 GND VREF12 3 4 (paddle ground on package bottom) Pin Description Pin # 1 2 3 4 5 6 7 8 9 Signal Name VCC1 RF In GND VREF12 GND GND RF Out VCC2 GND Supply Voltage to Input Stage RF Input Signal Ground Reference Voltage Ground Ground RF Output Signal Supply Voltage to Output Stage Ground Description (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FMPA2300 Rev. A FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Electrical Characteristics(1) OFDM Modulation (176s burst time, 100s idle time) 54Mbps Data Rate, 16.7MHz Bandwidth Parameter Frequency Collector Supply Voltage (VCC1, VCC2) Reference Supply Voltage (VREF12) Reference Supply Current (VREF12) Gain Total Measured Current @ 22dBm Pout EVM @ 22dBm Pout (2) Min. 2.3 3.0 Typ. 3.4 2.85 8 25.5 225 2 16.5 Max. 2.4 4.2 Units GHz V V mA dB mA % % PAE @ 22dBm Modulated Pout Electrical Characteristics(1) Single Tone Parameter Frequency Collector Supply Voltage (VCC1, VCC2) Reference Supply Voltage (VREF12) Gain Total Quiescent Collector Current Reference Current at pin (VREF12) P1dB Compression Collector Current @ P1dB Compression Shutdown Current ( VREF12 = 0V) Input Return Loss Output Return Loss Turn-On Time Min. 2.3 3.0 2.7 Typ. 3.4 2.85 25.5 130 8 30 580 5 20 7 <1 Max. 2.4 4.2 3.1 Units GHz V V dB mA mA dBm mA A dB dB S Absolute Maximum Ratings(3) Symbol VCC1, VCC2 IC1, IC2 Parameter Positive Supply Voltage Supply Current IC1 IC2 Positive Reference Voltage RF Input Power Case Operating Temperature Storage Temperature Ratings 5 100 900 3.1 +10 -40 to +85 -55 to +150 Units V mA mA V dBm C C VREF12 Pin Tcase Tstg Notes: 1. VCC1, VCC2 = 3.4V, VREF12 = 2.85V, TA=25C, PA is constantly biased, 50 system. 2. Percentage includes system noise floor of EVM = 0.8%. 3. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values. 2 FMPA2300 Rev. A www.fairchildsemi.com FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Performance Data OFDM Modulation (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7MHz Bandwidth Note: Uncorrected EVM. Source EVM is approximately 0.8%. Total Measured EVM vs. Modulated Output Power Vref = 2.85V, Vc12 = 3.4V, T = 25C 12 11 10 EVM 2.3GHz EVM 2.35GHz EVM 2.4GHz 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Total Measured EVM (%) 9 Modulated Output Power (dBm) Total Measured Gain vs. Modulated Output Power Vref = 2.85V, Vc12 = 3.4V, T = 25C 28 2.3GHz 2.35GHz 27 2.4GHz Total Measured Gain (dB) 26 25 24 23 22 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Modulated Output Power (dBm) 3 FMPA2300 Rev. A www.fairchildsemi.com FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Performance Data OFDM Modulation (Continued) (with 176ms burst time, 100ms idle time) 54Mbps Data Rate, 16.7MHz Bandwidth Note: Uncorrected EVM. Source EVM is approximately 0.8%. PAE vs. Modulated Output Power Vref = 2.85V, Vc12 = 3.4V, T = 25C 35 30 25 PAE 2.3GHz PAE (%) 20 PAE 2.35GHz PAE 2.4GHz 15 10 5 0 0 123 456 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Modulated Output Power (dBm) Total Measured Current vs. Modulated Output Power Vref = 2.85V, Vc12 = 3.4V, T = 25C 400 350 2.3GHz Total Measured Current (mA) 300 2.35GHz 2.4GHz 250 200 150 100 50 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Modulated Output Power (dBm) 4 FMPA2300 Rev. A www.fairchildsemi.com FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Performance Data Single Tone Gain vs. Single Tone Output Power Vref = 2.85V, Vc12 = 3.4V, T = 25C 28 27 Total Measured Single Tone Gain (dB) 26 25 24 23 2.3GHz 2.35GHz 2.4GHz 22 21 20 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Single Tone Output Power (dBm) S-Parameters vs. Frequency Vref = 2.85V, Vc12 = 3.4V, T = 25C 30 30 20 20 10 10 0 0 -10 S21 -20 S11 S22 -30 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 -10 -20 -30 Frequency (GHz) 5 FMPA2300 Rev. A S11, S22 (dB) www.fairchildsemi.com S21 (dB) FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Evaluation Board Layout 1 5 6 3 6 5 2 8 4 7 Evaluation Board Schematic 3.3F Vcc1 50 TRL 3 Vref12 4 1000pF 220 pF 1 2 100pF 8 1000pF 3.3F Vcc2 50 TRL (package base) XYTT 2300 9 6 7 5,6 www.fairchildsemi.com FMPA2300 Rev. A FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Evaluation Board Turn-On Sequence(4) Recommended turn-on sequence: 1. Connect common ground terminal to the Ground (GND) pin on the board. 2. Apply positive supply voltage VC1 (=3.4V) to pin VCC1 (first stage collector). 3. Apply positive supply voltage VC2 (=3.4V) to pin VCC2 (second stage collector). 4. Apply positive bias voltage VREF12 (=2.85V) to pin VREF (bias networks). 5. At this point, you should expect to observe the following positive currents flowing into the pins: Pin Current VREF12 7.0-9.0mA VCC1 50.0-60.0mA VCC2 70.0-80.0mA 6. Apply input RF power to SMA connector pin RFIN. Currents in pins VC1 and VC2 will vary depending on the input drive level. 7. Vary positive voltage on pin VREF12 from +2.85 V to +0 V to shut down the amplifier or alter the power level. Shut down current flow into the pins: Pin Current VCC1 <1nA VCC2 <1nA Recommended turn-off sequence: Use reverse order described in the turn-on sequence above. Note: 4. Turn on sequence is not critical and it is not necessary to sequence power supplies in actual system level design. Package Outline I/O 1 INDICATOR 1 TOP VIEW 8 XYTT 2300 2 3.00 -0.50 mm SQ. 3 4 +.100 7 6 5 X 23 Y T T 00 0.60mm Mold Head Height FRONT VIEW 1.10mm MAX. 4X R .20mm 4 Back Side Solder Mask 3 2 1 1.40mm BOTTOM VIEW 6 5 0.44 2 0.40mm 2.65mm 1 0.40mm 0.10mm 0.40mm 0.10mm 7 8 0.175mm See Detail A 0.80mm Detail A 7 FMPA2300 Rev. A www.fairchildsemi.com FMPA2300 2.3-2.4GHz WiMax/WiBro Linear Power Amplifier Applications Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC and ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: - A properly grounded static-dissipative surface on which to place devices. - Static-dissipative floor or mat. - A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, and ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild recommends the following procedures prior to assembly. * Assemble the devices within 7 days of removal from the dry pack. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure, at 125C for 24 hours minimum, must be performed. Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A maximum heating rate is 3C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 60-180 seconds at 150-200C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 20 seconds. Soldering temperatures should be in the range 255-260C, with a maximum limit of 260C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heat sink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should be subjected to no more than 15C above the solder melting temperature for no more than 5 seconds. No more than 2 rework operations should be performed. Recommended Solder Reflow Profile 260 Ramp-Up R ate 3 C/sec max Peak tem p 260 +0/-5 C 10 - 20 sec Temperature (C) 217 200 Time above li quidus temp 60 - 150 sec 150 Preheat, 150 to 200 C 60 - 180 sec 100 Ramp-Up R ate 3 C/sec max 50 25 Time 25 C/sec t o peak tem p 6 mi nutes max Ramp-Do wn Rate 6 C/sec max Time (Sec) 8 FMPA2300 Rev. A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I20 |
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